Alumina Ceramics 96% | Alumina Ceramics 99.7% | ZTA Zirconia toughed Alumina |
Aluminum Nitride AlN 170W | Zirconia | Silicon Nitride Si3N4 |
Alumina 96% standard size substrate
Alumina ceramic substrate produced by tape casting method.
- Order from 1pc available.
Size (mm) | thickness (mm) |
□60mm | 0.38t |
0.635t | |
2.0t | |
□114.3mm | 0.38t |
1.0t | |
□120.65mm | 0.635t |
□185mm | 1.0t |
190.5×139.7mm | 0.38t |
0.5t | |
0.635t | |
0.76t | |
1.0t |
If customers prefer substrate with a smaller area than the default size, we also offer cutting services.
Please feel free to ask for more information.
Alumina 99.6% standard size substrate
Thin Plate High-Purity Alumina Ceramic Substrates by Press Molding
- Size: 50mm square, 100mm square, 150mm square
- Thickness: 0.3t (up to 100mm square), 0.5t, 0.635t, 1.0t
- If you require other thicknesses, please specify in the additional notes section.
- Quantity: From 1 piece
- Material: N-99, N-999, N-999S
- Surface Roughness: Standard is ground finish, but mirror finish is also available. Please specify in the additional notes section if required.
High-Purity Alumina Ceramic Substrates by Tape Casting
- Size: 120mm square
- Thickness: 0.25t
- Material: N-99
- Surface Roughness: Standard is ground finish, but mirror finish is also available. Please specify in the additional notes section if required.
- We also handle small quantities. We will cut to your specified size if you require sizes smaller than the standard.
Related page Case Introduction High purity alumina 0.3t 0.07t Substrate N-99TP Thin alumina 99.8 |
Aluminum Nitride standard-size substrate (Thermal conductivity: 170W~250W/mK)
Aluminum Nitride TC 170W/mk guaranteed tape casting substrate.
- Order from 1pc available.
- Thermal conductivity: 170W/mK
Size (mm) Thickness (mm) □50.8mm 0.127t 0.254t □114.3mm 0.38t 0.5t 0.635t 1.0t
If customers prefer substrate with a smaller area than the default size, we also offer cutting services.
Regarding TC 200~250W type, please contact us for details.
Please feel free to ask for more information.
Standard size Zirconia Substrate(3YSZ)
Zirconia ceramic substrate made by tape casting method.
Size (mm) | Thickness(mm) |
□50mm | 0.6t |
□50mm | 1.0t |
□100mm | 1.0t |
- Material Zirconia(3YSZ)
- Surface roughness Ra<0.6
-
If customers prefer substrate with a smaller area than the default size, we also offer cutting services.
Please feel free to ask for more information.
ZTA (Zirconia Toughed Alumina)
ZTA (Zirconia Toughed Alumina) ceramic substrate made by tape casting method.
- □190×138×0.32t 1000pcs/Lot
- □120×112×0.36t 100pcs/Lot
If customers prefer substrate with a smaller area than the default size, we also offer cutting services.
Please feel free to ask for more information.
Silicon Nitride(Si3N4)Ceramics Standard size substrate
Silicon nitride(Si3N4) ceramic substrates are made using the sheet-forming method. In order to popularize electric vehicles, clean energy, etc., power semiconductors have excellent characteristics for smaller size, lighter weight, and higher output, and silicon nitride substrates are attracting attention as alternatives to Alumina and AlN substrates.
Specification
- High Electric Insulation Performance.
- High thermal Conductivity (80W/mK)
Size □75×0.32 | Size 138×190×0.32 |
Size | Thickness |
□75 | 0.32 ±0.03 |
138×190 | 0.32 ±0.03 |
□100 | 0.25 +0/-0.01 |
- Surface Roughness Ra≦0.7μm
- Thermal Conductivity(m.k) ≧80
As you can see, the substrate will not be broken even if the hands apply the force. (□75×0.32t substrate)
Properties
Material Name | Silicon Nitride | ||
NAC No. | N-SN7 | ||
Chemical composition | Si3N4 | ||
Bulk Density | g/cm3 JIS R1634 | 3.17 | |
Water Absorption | % JIS R1634 | 0 | |
Mechanical Properties | Vickers Hardness | GPa JIS R1610 | 13 |
Bending Strength | MPa JIS R1601 | 700 | |
Compressive Strength | MPa JIS R1608 | - | |
Young’s module | GPa JIS R1602 | 310 | |
Tensile Strength | MPa JIS R 1606 | - | |
Fracture Toughness | MPa・m1/2 JIS R1607 | 6 | |
Electrical Properties | Volume Resistivity | Ω・cm JIS C2141 | >1014 |
Dielectric Constant(1MHz) | (1MHz) JIS C2141 | 7.8 | |
Dielectric Loss-tangent(1MHz) | 10⁻⁴(1MHz) JIS C2141 | 4 | |
Dielectric Strength | kV/mm JIS C2141 | 20 | |
Te Value | ℃ | - | |
Thermal Properties | Thermal Expansion | 10-6/℃ JIS R1608 | 2.7(RT-400℃) |
Thermal Conductivity | W/m・K JIS R1611 | 80 |