Alumina 96% standard size substrate
Alumina ceramic substrate produced by tape casting method.
- Default size options: (L x W x H)
□114.3 x □114.3 x 0.32/0.635 (mm)
□120.65 x □120.65 x 0.32/0.635 (mm)
□190.5 x □139.7 x 1 (mm)
If customers prefered substrate with smaller area than default size, we also offer cutting services.
Please feel free to ask for more information.
Alumina 99.6% standard size substrate
Alumina ceramic substrate produced by tape casting method.
- Default size options: (L x W x H)(mm)
(0.25)
□120 x 120 x (0.38)
(0.5)
If customers prefer substrate with a smaller area than the default size, we also offer cutting services.
Please feel free to ask for more information.
Aluminum Nitride standard size substrate (Thermal conductivity : 170W~250W/mK)
Aluminum Nitride TC 170W/mk guaranteed tape casting substrate.
- Thermal conductivity: 170W/mK
- Default size options: (L x W x H)
114.3 x 114.3 x 0.38/0.50/1.00 (mm)
50.8 x 50.8 x 0.127/0.254 (mm)
If customers prefer substrate with a smaller area than the default size, we also offer cutting services.
TC 200~250W type, please contact us for details.
Please feel free to ask for more information.
Standard size Zirconia Substrate(3YSZ)
Zirconia ceramic substrate made by tape casting method.
- Size □50mm×0.6mm
- Material Zirconia(3YSZ)
- Surface roughness Ra<0.6
-
If customers prefered substrate with smaller area than the default size, we also offer cutting services.
Please feel free to ask for more information.
ZTA (Zirconia Toughed Alumina)
ZTA (Zirconia Toughed Alumina) ceramic substrate made by tape casting method.
- □190×138×0.32t 1000pcs/Lot
- □120×112×0.36t 100pcs/Lot
If customers prefered substrate with smaller area than the default size, we also offer cutting services.
Please feel free to ask for more information.
Silicon Nitride(Si3N4)Ceramics Standard size substrate
Silicon nitride(Si3N4) ceramic substrates made by sheet forming method. In order to popularize electric vehicles, clean energy, etc., power semiconductors have excellent characteristics for smaller size, lighter weight, and higher output, and silicon nitride substrates are attracting attention as alternatives to Alumina and AlN substrates.
Specification
- High Electric Insulation performance.
- High thermal Conductivity (80W/mK)
Size □75×0.32 | Size 138×190×0.32 |
Size | Thickness |
□75 | 0.32 ±0.03 |
138×190 | 0.32 ±0.03 |
- Surface Roughness Ra≦0.7μm
- Thermal Conductivity(m.k) ≧80
As you can see, the substrate will not be broken even if the hands apply the force.(□75×0.32t substrate)
Properties
材質名称 | Silicon Nitride | ||
NAC No. | N-SN7 | ||
Chemical composition | Si3N4 | ||
Bulk Density | g/cm3 JIS R1634 | 3.17 | |
Water Absorption | % JIS R1634 | 0 | |
Mechanical Properties | Vickers Hardness | GPa JIS R1610 | 13 |
Bending Strength | MPa JIS R1601 | 700 | |
Compressive Strength | MPa JIS R1608 | - | |
Young’s module | GPa JIS R1602 | 310 | |
Tensile Strength | MPa JIS R 1606 | - | |
Fracture Toughness | MPa・m1/2 JIS R1607 | 6 | |
Electrical Properties | Volume Resistivity | Ω・cm JIS C2141 | >1014 |
Dielectric Constant(1MHz) | (1MHz) JIS C2141 | 7.8 | |
Dielectric Loss-tangent(1MHz) | 10⁻⁴(1MHz) JIS C2141 | 4 | |
Dielectric Strength | kV/mm JIS C2141 | 20 | |
Te Value | ℃ | - | |
Thermal Properties | Thermal Expansion | 10-6/℃ JIS R1608 | 2.7(RT-400℃) |
Thermal Conductivity | W/m・K JIS R1611 | 80 |