Silicon Nitride (Si3N4) substrate. One side mirror is finished
Size: □100 X 0.25t +0/ -0.01
Surface roughness: One side mirror finished Ra 0.03
Thermal conductivity(m.k):≧80
Warp: 0.3% against length
Properties
| 材質名称 | Silicon Nitride | ||
| NAC No. | N-SN7 | ||
| Chemical composition | Si3N4 | ||
| Bulk Density | g/cm3 JIS R1634 | 3.17 | |
| Water Absorption | ％ JIS R1634 | 0 | |
| Mechanical Properties | Vickers Hardness | GPa JIS R1610 | 13 |
| Bending Strength | MPa JIS R1601 | 700 | |
| Compressive Strength | MPa JIS R1608 | － | |
| Young’s module | GPa JIS R1602 | 310 | |
| Tensile Strength | MPa JIS R 1606 | － | |
| Fracture Toughness | MPa･m1/2 JIS R1607 | 6 | |
| Electrical Properties | Volume Resistivity | Ω･cm JIS C2141 | ＞1014 |
| Dielectric Constant（1MHz） | (1MHz) JIS C2141 | 7.8 | |
| Dielectric Loss-tangent（1MHz） | 10⁻⁴(1MHz) JIS C2141 | 4 | |
| Dielectric Strength | kV/mm JIS C2141 | 20 | |
| Te Value | ℃ | － | |
| Thermal Properties | Thermal Expansion | 10-6/℃ JIS R1608 | 2.7(RT-400℃) |
| Thermal Conductivity | W/m･K JIS R1611 | 80 | |